p arameter t est conditions 2 unit min. t yp. max insertion loss dc ?0.1 ghz db 0.8 1.0 dc ?0.5 ghz db 0.8 1.1 dc ?1.0 ghz db 0.9 1.2 dc ?2.0 ghz db 1.2 1.4 isolation dc ?0.1 ghz db 54 60 dc ?0.5 ghz db 46 51 dc ?1.0 ghz db 36 39 dc ?2.0 ghz db 20 24 vswr on 1.3:1 off 1.3:1 tr ise , tfall 10% to 90% rf, 90% to 10% rf ns 8 t on, t off 50% control to 90% rf, 50% control to 10% rf ns 16 tr ansients in band mv 15 one db input p ow er 0.05 ghz dbm 21 compression input p ow er 0.5 ?2.0 ghz dbm 27 ip 2 measured relativ e 0.05 ghz dbm 45 to input p ow er 0.5 ?2.0 ghz dbm 60 (for two-tone input po w er up to +5 dbm) ip 3 measured relativ e 0.05 ghz dbm 35 to input p ow er 0.5 ?2.0 ghz dbm 46 (for two-tone input po w er up to +5 dbm) electrical specifications, t a = +25? features l v ery low power consumption: 100 ? l low insertion loss: 1 db l high isolation: 25 db up to 2 ghz l v ery high intercept point: 46 dbm ip 3 l nanosecond switching speed l t emperature range: -40?c to +85?c l low cost soic24 plastic package l t ape and reel packaging available 1 description m/a-com s sw-419 is a gaas mmic sp4t terminated switch in a low cost soic 24-lead wide body surface mount plastic package. the sw-419 is ideally suited for use where very low power con- sumption is r e q u i r ed. typical applications include switch matri- ces, and filter banks in systems such as: radio and cellular equip- ment, pcm, gps, fiber optic modules, and other battery power e d radio equipment. the sw-419 is fabricated with a monolithic gaas mmic using a m a t u r e 1-micron process. the process features full chip passiva- tion for increased per f o r mance and r e l i a b i l i t y . gaas sp4t terminated switch dc - 2 ghz s w- 4 1 9 so-24 1. refer to ?ape and reel packaging section, or contact factor y. 2. all measurements with 0, -5 v control voltages at 1 ghz in a 50 w system, unless otherwise specified. p art no. p acka ge sw-419 pin soic 24-lead plastic package sw-419 tr f orward t ape & reel sw-419 rtr re v erse t ape & reel o r dering inf o r m a t i o n
v 2.00 p arameter absolute maximum max. input p ow er below 500 mhz +27 dbm a b o ve 500 mhz +30 dbm control v oltage +5 v , ?8.5 v storage t emperature -65?to +150? pin no. description 1 rf common 2 gnd 3 gnd 4 rf1 5 gnd 6 gnd 7 rf2 8 gnd 9 a2 10 a1 11 b1 12 b2 pin no. description 13 b3 14 b4 15 a4 16 a3 17 gnd 18 rf3 19 gnd 20 gnd 21 rf4 22 gnd 23 gnd 24 gnd control input condition of switch rf common to each rf por t a1 b1 a2 b2 a3 b3 a4 b4 rf1 rf2 rf3 rf4 1 0 0 1 0 1 0 1 on off off off 0 1 1 0 0 1 0 1 off on off off 0 1 0 1 1 0 0 1 off off on off 0 1 0 1 0 1 1 0 off off off on ? 0 ?-0.2 v @ 20 ? max ? -5 v @ 20 ? t yp to -8 v @ 300 ? max. absolute maximum ratings 1 1.operation of this device abo v e any one of these parameters may cause perma - nent damage . pin configuration t ruth t able electrical schematic functional schematic
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